SOPHI-30, cluster-type low-acceleration and high-density ion implanter has no mass separator and supports thin wafers.
Cluster type |
||
Thin wafer compatible. |
||
No mass separator. |
||
Advantages |
||
High throughput ion implanter with low acceleration and high density. |
||
Half price as compared to conventional implanter. |
||
⅓ the footprint of conventional implanter. |
||
Power device manufacturing process, IGBT. |
||
Wafer size: Up to 200mm. |
||
Contact us for more product information and specifications.