CC-200 is a compact and easy-to-use system for Research and Development use and production.
High-density plasma process on 27.12MHz |
||
Supports the deposition of SiH4 (SiO2, SiNx, SiON, α-Si) and TEOS (SiO2). |
||
Supports chamber cleaning by CF4+O2 plasma. |
||
Supports the heater for low-temperature deposition of organic EL. |
||
Supports various substrate sizes. |
||
Vacuum box-enabled indirect sequential processing within C-series (Sputter : CS-200, Evaporation : CV-200). |
||
Power devices. |
||
Compound-related devices of LED, LD and high-speed devices. |
||
Organic EL system for R&D use. |
||
Solar battery system for R&D use. |
||
MEMS. |
||
Contact us for more product information and specifications.